Seminar Announcement: High-Voltage GaN Power Devices with Highest Quality and Highest Reliability
Seminar: "High-Voltage GaN Power Devices with Highest Quality and Highest Reliability"
Speaker: Davide Bisi, Transphorm Inc.
April 16th 2019, 16:00, room P1.5 MO25
Abstract: Power Electronics is ubiquitous in modern society. It addresses for power conversion in automotive, energy harvesting, IT infrastructures, consumer & industrial applications. At the core of power electronics, power transistors are operated as high-frequency high-voltage switches. Gallium nitride (GaN), a wide band-gap semiconductor, enables the implementation of smaller, faster and more efficient power devices than silicon, thus propelling the design of novel, more compact and more efficient power electronics systems. In this seminar, we’ll review the key elements to understand highest quality and highest reliability GaN technology and its path to a successful commercialization.
Welcome to the GaN revolution.
Speaker Bio: Davide Bisi received the M.S. degree from University of Modena and Reggio Emilia in 2011, and Ph.D. degree from University of Padova in 2015. In 2016, he joined Transphorm, Inc. (Goleta, USA), where he took responsibility of advanced GaN FETs design and characterization. He’s serving as a member of the ESREF conference technical committee. He’s author of more than 50 technical papers and recipient of 3 best-paper-awards in the field of GaN devices.